vishay tsha620. document number 81021 rev. 1.4, 11-may-04 vishay semiconductors www.vishay.com 1 94 8389 high speed infrared emitting diode, 870 nm, gaalas double hetero description the tsha620. series are high efficiency infrared emitting diodes in gaalas on gaalas technology, molded in a clear, untinted plastic package. in comparison with the standard gaas on gaas tech- nology these high intensity emitters feature about 70 % radiant power improvement. in contrast to the tsha520. series lead stand-offs are omitted. features ? extra high radiant power and radiant intensity suitable for high pulse current operation standard t-1? ( ? 5 mm) package leads formed without stand-off angle of half intensity ? = 12 peak wavelength p = 875 nm high reliability good spectral matching to si photodetectors lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications infrared remote control and free air transmission sys- tems with high power and long transmission distance requirements in combination with pin photodiodes or phototransistors. because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 si fm 200 ma surge forward current t p = 100 si fsm 2.5 a power dissipation p v 210 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 sec, 2 mm from case t sd 260 c thermal resistance junction/ ambient r thja 350 k/w
www.vishay.com 2 document number 81021 rev. 1.4, 11-may-04 vishay tsha620. vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified type dedicated characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min typ. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v temp. coefficient of v f i f = 100 ma tk vf - 1.6 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf parameter test condition symbol min typ. max unit temp. coefficient of e i f = 20 ma tk e - 0.7 %/k angle of half intensity ? 12 deg peak wavelength i f = 100 ma p 875 nm spectral bandwidth i f = 100 ma ? 80 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 600 ns i f = 1.5 a t r 300 ns fall time i f = 100 ma t f 600 ns i f = 1.5 a t f 300 ns virtual source diameter ? 3.7 mm parameter test condition part symbol min typ. max unit forward voltage i f = 1.5 a, t p = 100 s tsha6200 v f 3.2 4.9 v TSHA6201 v f 3.2 4.9 v tsha6202 v f 3.2 4.5 v tsha6203 v f 3.2 4.5 v radiant intensity i f = 100 ma, t p = 20 ms tsha6200 i e 25 40 125 mw/sr TSHA6201 i e 30 50 125 mw/sr tsha6202 i e 36 60 125 mw/sr tsha6203 i e 50 65 125 mw/sr i f = 1.5 a, t p = 100 s tsha6200 i e 300 500 mw/sr TSHA6201 i e 400 600 mw/sr tsha6202 i e 500 700 mw/sr tsha6203 i e 600 800 mw/sr radiant power i f = 100 ma, t p = 20 ms tsha6200 e 22 mw TSHA6201 e 23 mw tsha6202 e 24 mw tsha6203 e 25 mw
vishay tsha620. document number 81021 rev. 1.4, 11-may-04 vishay semiconductors www.vishay.com 3 typical characteristics (tamb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. pulse forward current vs. pulse duration 0 50 100 150 200 250 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 94 7957 r thja 20 40 60 80 100 0 020406080 0 25 50 75 100 125 i C forward current ( ma) f t amb C ambient temperature ( c ) 100 94 8002 e t p - pulse duration ( ms ) 94 8003 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t= 0.01 i fsm = 2.5 a ( single pulse ) 0.05 0.1 0.2 0.5 i - forward curren t(a) f figure 4. forward current vs. forward voltage figure 5. relative forward voltage vs. ambient temperature figure 6. radiant intensity vs. forward current v f - forward voltag e(v) 94 8005 10 1 10 2 10 3 10 4 t p = 100 s t p / t = 0.001 4 3 2 1 0 i - forward current ( ma ) f 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 i f C forward current ( ma ) 94 8745 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i C radiant intensity ( mw/sr ) e tsha 6200 tsha 6201 tsha 6202 tsha 6203
www.vishay.com 4 document number 81021 rev. 1.4, 11-may-04 vishay tsha620. vishay semiconductors figure 7. radiant power vs. forward current figure 8. rel. radiant intensity/power vs. ambient temperature figure 9. relative radiant power vs. wavelength - radiant power ( mw ) e i f - forward current ( ma ) 94 8007 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i; e rel e rel 140 94 8020 i f =20ma t amb - ambient temperature ( c) 780 880 - wavelength ( nm ) 980 94 8000 - relative radiant power e 0 0.25 0.5 0.75 1.0 1.25 i f = 100 ma p e e e )/ () ( ) rel = ( 0.4 0.2 0 0.2 0.4 i C relative radiant intensity e rel 0.6 94 8008 e 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
vishay tsha620. document number 81021 rev. 1.4, 11-may-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 9612125
www.vishay.com 6 document number 81021 rev. 1.4, 11-may-04 vishay tsha620. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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